2N4861 N-Channel -30V 1.8W 10mW JFET

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Type of Transistor: JFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 0.36 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 4 V

Maximum Drain Current |Id|: 0.008 A

Maximum Junction Temperature (Tj): 175 °C

Rise Time (tr): 10 nS

Maximum Drain-Source On-State Resistance (Rds): 60 Ohm