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BG Part Number: 9Z1881
1N4454 High Conductance Ultra Fast Diode DO35

Absolute Maximum Ratings* TA = 25deg C unless otherwise noted

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.


1) These ratings are based on a maximum junction temperature of 200deg C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25deg C unless otherwise noted
Symbol Parameter Value Units
WIV Working Inverse Voltage 50 V
IO Average Rectified Current 200 mA
IF DC Forward Current 400 mA
if Recurrent Peak Forward Current 600 mA
if(surge) Peak Forward Surge Current
Pulse width = 1.0 second
Pulse width = 1.0 microsecond
Tstg Storage Temperature Range -65 to +200 deg C
TJ Operating Junction Temperature 175 deg C
Symbol Characteristic Max Units
PD Total Device Dissipation
Derate above 25deg C
3.33mW mW/deg C
RqJA Thermal Resistance, Junction to Ambient 300 deg C/W
Discrete POWER & Signal