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List Price: $1.79
Your Price: $0.48
Quantity In Stock:1,496
BG Part Number: FETIRF610
: Samsung
: IRF610
IRF610 Power MOSFET N-Channel 200V 3.3A (Tc) 36W (Tc) Through Hole TO-220AB

FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25deg C3.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.5 Ohm @ 2A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs8.2nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds140pF @ 25V
Power Dissipation (Max)36W (Tc)
Operating Temperature-55deg C ~ 150deg C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB